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N ./2006
MITSUBISHI SEMICONDUTOR
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz Gs = 10.5dB (Typ.)
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25C )
Ratings -4 -4 60 50 125 -65 to +125
Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS
Synbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter
Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure
(Ta=25C )
Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V,ID=10mA f=20GHz -3 -15 -0.1 9.0 --
Limits TYP. ----10.5 0.55 MAX -50 60 -1.5 -0.80
Unit V A mA V dB dB
MITSUBISHI
(1/5)
Nov./2006
N ./2006
MITSUBISHI SEMICONDUTOR
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Fig.1
Unit : mm Top
+0.20 2.15 -0.10
Side
A
2.0 (1
Bottom
22) 1.2 0
. (2 20

)
2-R0.275
05 0.
J5 6EG

0.200.1 0.800.1
2.15
+0.20 -0.10
2-R0.20

4-
55 0.
05 0.
20.5 0 05 0.
(0.30) (2.30)
Square shape electrode is Drain
from "A" side view
Gate Source Drain
MITSUBISHI
(2/5)
Nov./2006
N ./2006
MITSUBISHI SEMICONDUTOR
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
TYPICAL CHARACTERISTICS
ID vs. VDS
50 Ta=25 VGS=-0.1V/STEP
(Ta=25C)
ID VS. VGS
50
Ta=25 VDS=2V
DRAIN CURRENT ID(mA) Drain Current ID(mA)
40
30
DRAIN CURRENT ID(mA) Drain Current ID(mA)
0 1 2 3
40
30
20
20
10
10
0
0
-1.00 -0.50 0.00
Drain to Source voltage VDS(V) DRAIN TO SOURCE VOLTAGE VDS(V)
Gate SOURCE VOLTAGE VGS(V) GATE TO to Source voltage VGS(V)
NF & Gs VS. ID
1.3 1.2
Ta=25 VDS=2V f=20GHz
13
Gs (dB) ASSOCIATED GAIN Gs(dB)
12 11 Gs 10 9 8 NF 7 6 5 4
NOISE FIGURE NF(dB)
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0
NF (dB)
5
10
ID (mA)
15
20
DRAIN CURRENT ID(mA)
MITSUBISHI
(3/5)
Nov./2006
N ./2006
MITSUBISHI SEMICONDUTOR
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
S PARAMETERS
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 (mag) 0.989 0.973 0.949 0.926 0.890 0.828 0.776 0.723 0.662 0.605 0.551 0.514 0.488 0.486 0.480 0.509 0.536 0.569 0.609 0.642 0.674 0.707 0.742 0.753 0.775 0.803 S11 (ang) -13.0 -25.9 -38.7 -52.0 -64.9 -81.1 -95.6 -110.6 -126.6 -142.6 -158.2 -174.5 167.0 149.0 131.8 113.0 95.1 78.2 62.7 47.3 34.3 21.1 9.2 -2.2 -12.5 -22.5 (mag) 4.537 4.502 4.472 4.460 4.431 4.394 4.311 4.230 4.094 3.943 3.826 3.740 3.622 3.572 3.512 3.425 3.349 3.226 3.091 2.934 2.752 2.617 2.471 2.307 2.139 2.008 S21 (ang) 165.8 152.9 140.4 127.3 114.9 99.8 86.3 73.2 59.9 47.4 35.4 23.7 11.2 -1.1 -12.6 -26.2 -39.1 -52.1 -66.1 -79.2 -91.8 -104.8 -117.4 -130.2 -142.4 -155.0 (mag) 0.014 0.028 0.041 0.054 0.066 0.076 0.085 0.093 0.099 0.102 0.102 0.100 0.099 0.098 0.094 0.099 0.099 0.100 0.099 0.096 0.091 0.089 0.082 0.081 0.072 0.069
(VDS=2V,ID=10mA, Ta=25C)
S12 (ang) 78.9 71.8 62.7 53.2 44.4 33.4 24.1 15.2 5.4 -4.0 -12.9 -19.7 -28.1 -32.1 -38.4 -43.0 -49.9 -58.5 -66.5 -75.2 -83.8 -92.5 -102.8 -111.9 -118.9 -135.9 S22 (mag) 0.637 0.629 0.621 0.608 0.592 0.539 0.505 0.469 0.423 0.368 0.318 0.279 0.232 0.203 0.169 0.148 0.133 0.132 0.160 0.204 0.250 0.293 0.350 0.390 0.430 0.474 (ang) -9.7 -19.6 -29.2 -39.0 -48.2 -60.1 -70.2 -80.4 -90.7 -100.2 -108.8 -116.3 -126.2 -138.3 -148.1 -175.1 157.1 120.7 92.2 67.8 50.6 37.0 23.8 13.5 2.4 -5.7
NOISE PARAMETERS
Freq. (GHz) 18 20 22 24 26 opt (mag) 0.358 0.372 0.390 0.417 0.473
(VDS=2V,ID=10mA, Ta=25C)
Rn NFmin (dB) 0.51 0.55 0.77 1.05 1.25
(ang) -137.2 -91.0 -47.7 -14.9 10.5
0.12 0.14 0.63 1.05 1.26
Note) Rn is normalized by 50ohm
Board: r=2.6 thickness=0.4mm HEMT mount
Gate
Drain
4-0.4 0.65
Reference Point 2.2mm
1.20
1.0mm
Reference Point
MITSUBISHI
(4/5)
Nov./2006
N ./2006
MITSUBISHI SEMICONDUTOR
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
MITSUBISHI
(5/5)
Nov./2006

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